همايش ملی پيشرفت های معماری سازمانی

English

صفحه اصلی / هشتمین همايش ملی پيشرفت های معماری سازمانی

Machine Learning-Driven Design Optimization of CNFET-Based SRAM Cells

نویسندگان :

Mohammadhasan Jali¹ S. Mohammadali Zanjani² Mehdi Dolatshahi³ Behrang Barekatain⁴

1- دانشگاه آزاد اسلامی واحد نجف آباد 2- دانشگاه آزاد اسلامی واحد نجف آباد 3- دانشگاه آزاد اسلامی واحد نجف آباد 4- دانشگاه آزاد اسلامی واحد نجف آباد

کلمات کلیدی :

CNFET-based SRAM،Machine learning optimization،Design automation،Low-power circuits،Circuit stability،Deep learning in circuit design،Electronic design automation

چکیده :

The rapid evolution of nanotechnology has positioned carbon nanotube field-effect transistors (CNFETs) as a promising alternative to traditional MOSFETs in the design of low-power, high-performance SRAM cells. However, optimizing the design of CNFET-based SRAM cells to meet stringent requirements, such as stability, power efficiency, and scalability, remains a significant challenge. In this paper, we explore the potential of machine learning (ML) algorithms to address these challenges by leveraging their capabilities in complex design optimization tasks. This paper presents a comprehensive review of various ML models, including supervised, unsupervised, reinforcement, and deep learning, and examines their application in optimizing key performance metrics of CNFET-based SRAM cells. Mathematical models and formulas for design optimization are presented alongside case studies demonstrating ML techniques’ effectiveness in improving SRAM stability and reducing power consumption. Finally, we discuss the challenges of integrating ML into circuit design workflows and propose future research directions, highlighting the transformative potential of ML in shaping the future of CNFET-based SRAM design.